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Physics of Semiconductor Devices |  |
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Physics of Semiconductor Devices | |
This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices.
Designed for graduate textbook adoptions and reference needs, this new edition includes:A complete update of the latest developmentsNew devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and moreMaterials completely reorganizedProblem sets at the end of each chapterAll figures reproduced at the highest quality
Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations.A Solutions Manual is available from the editorial department.
作者简介S. M. Sze received his PhD in electrical engineering from Stanford University. He was with Bell Telephone Laboratories from 1963–1989, joining the faculty of the Department of Electronics Engineering, National Chiao Tung University (NCTU) in 1990. Dr. Sze is currently Distinguished Chair Professor of NCTU and has served as a visiting professor to many academic institutions. He has made fundamental and pioneering contributions to semiconductor devices; of particular importance is his coinvention of nonvolatile semiconductor memory such as flash memory and EEPROM. Dr. Sze has authored, coauthored, or edited over 200 technical papers and twelve books. His book Physics of Semiconductor Devices (Wiley) is one of the most cited works in contemporary engineering and applied science publications (over 15,000 citations from ISI Press). Dr. Sze is the recipient of numerous awards and holds such titles as Life Fellow of the IEEE, Academician of the Academia Sinica, and member of the US National Academy of Engineering.
Kwok K. Ng received his PhD from Columbia University in 1979 and BS from Rutgers University in 1975, both in electrical engineering. He joined Bell Laboratories of AT&T in Murray Hill, New Jersey, in 1980, which spun off as part of Lucent Technologies in 1996. He became affiliated with Agere Systems in Allentown, Pennsylvania, as the microelectronics unit became independent in 2001. He has been with MVC in San Jose, California, since 2005. Dr. Ng has also held positions as editor of IEEE Electron Device Letters and liaison to IEEE Press. He is the author of the Complete Guide to Semiconductor Devices, Second Edition (Wiley).
目录Introduction.
Part I Semiconductor Physics.
Chapter 1 Physics and Properties of Semiconductors-A Review.
1.1 Introduction.
1.2 Crystal Structure.
1.3 Energy Bands and Energy Gap.
1.4 Carrier Concentration at Thermal Equilibrium.
1.5 Carrier-Transport Phenomena.
1.6 Phonon, Optical, and Thermal Properties.
1.7 Heterojunctions and Nanostructures.
1.8 Basic Equations and Examples.
Part II Device Building Blocks.
Chapter 2 p-n Junctions.
2.1 Introduction.
2.2 Depletion Region.
2.3 Current-Voltage Characteristics.
2.4 Junction Breakdown.
2.5 Transient Behavior and Noise.
2.6 Terminal Functions.
2.7 Heterojunctions.
Chapter 3 Metal-Semiconductor Contacts.
3.1 Introduction.
3.2 Formation of Barrier.
3.3 Current Transport Processes.
3.4 Measurement of Barrier Height.
3.5 Device Structures.
3.6 Ohmic Contact.
Chapter 4 Metal-Insulator-Semiconductor Capacitors.
4.1 Introduction.
4.2 Ideal MIS Capacitor.
4.3 Silicon MOS Capacitor.
Part III Transistors.
Chapter 5 Bipolar Transistors.
5.1 Introduction.
5.2 Static Characteristics.
5.3 Microwave Characteristics.
5.4 Related Device Structures.
5.5 Heterojunction Bipolar Transistor.
Chapter 6 MOSFETs.
6.1 Introduction.
6.2 Basic Device Characteristics.
6.3 Nonuniform Doping and Buried-Channel Device.
6.4 Device Scaling and Short-Channel Effects.
6.5 MOSFET Structures.
6.6 Circuit Applications.
6.7 Nonvolatile Memory Devices.
6.8 Single-Electron Transistor.
Chapter 7 JFETs, MESFETs, and MODFETs.
7.1 Introduction.
7.2 JFET and MESFET.
7.3 MODFET.
Part IV Negative-Resistance and Power Devices.
Chapter 8 Tunnel Devices.
8.1 Introduction.
8.2 Tunnel Diode.
8.3 Related Tunnel Devices.
8.4 Resonant-Tunneling Diode.
Chapter 9 IMPATT Diodes.
9.1 Introduction.
9.2 Static Characteristics.
9.3 Dynamic Characteristics.
9.4 Power and Efficiency.
9.5 Noise Behavior.
9.6 Device Design and Performance.
9.7 BARITT Diode.
9.8 TUNNETT Diode.
Chapter 10 Transferred-Electron and Real-Space-Transfer Devices.
10.1 Introduction.
10.2 Transferred-Electron Device.
10.3 Real-Space-Transfer Devices.
Chapter 11 Thyristors and Power Devices.
11.1 Introduction.
11.2 Thyristor Characteristics.
1 1.3 Thyristor Variations.
11.4 Other Power Devices.
Part V Photonic Devices and Sensors.
Chapter 12 LEDs and Lasers.
12.1 Introduction.
12.2 Radiative Transitions.
12.3 Light-Emitting Diode (LED).
12.4 Laser Physics.
12.5 Laser Operating Characteristics.
12.6 Specialty Lasers.
Chapter 13 Photodetectors and Solar Cells.
13.1 Introduction.
13.2 Photoconductor.
13.3 Photodiodes.
13.4 Avalanche Photodiode.
13.5 Phototransistor.
13.6 Charge-Coupled Device (CCD).
13.7 Metal-Semiconductor-Metal Photodetector.
13.8 Quantum-Well Infrared Photodetector.
13.9 Solar Cell.
Chapter 14 Sensors.
14.1 Introduction.
14.2 Thermal Sensors.
14.3 Mechanical Sensors.
14.4 Magnetic Sensors.
14.5 Chemical Sensors.
Appendixes.
A. List of Symbols.
B. International System of Units.
C. Unit Prefixes.
D. Greek Alphabet.
E. Physical Constants.
F. Properties of Important Semiconductors.
G. Properties of Si and GaAs.
H. Properties of SiO, and Si3N.
Index.
网友对Physics of Semiconductor Devices的评论
此书被奉为半导体行业学习的必备经典教材！
可惜英语版价格实在昂贵，一般师生承受不起。
作者施敏博士是华人。所以，作者的成就对国人也是一种激励！
This is a great book for intermediate and advanced physics of semiconductor devices. I would caution against the use of of the term 'physics', though, because it usually restricts the physics aspect to energy band diagrams. There is some talk of E-k digrams, but assumes prior exposure to them. There are better books for the physics and E-k diagrams. It does a great job describing many different types of advanced semiconductor devices and their applications. For the beginner, though, I recommend Pierret's "Semiconductor Device Fundamentals". It's not as current as Sze, but gives you a much better foundation of pn junctions, BJTs, and MOSFETs.
For people new to semiconductor devices, some of the concepts in the book might be a bit hard to understand, because it's one of those books that is easier to comprehend with some fundamentals in solid state physics and basic device transport knowledge. It's easier for use as a reference book if you want to flip through for reviewing semiconductor concepts. It'll give you a general overview of the device principles for all the basic device types that you see right now for current technology, so it is useful too for brushing up on fundamental semiconductor knowledge.
Hello,
I've read several books on Semicond. Physics (both in English and Italian) and I suggest to all lazy Italian guys, like I am, to save time and buy this book, which is as much as long the best (easy to read; clear to understand; deep enoguh; both theory and practice; well organized; general overview) textbook in Semiconductor Physics I've ever read!
A.
This is a fairly good book; however, it is more like a 3rd edition of the Complete Guide to Semiconductor Devices by the second author Ng than the expected updated edition of Sze's classic. Many of the figures are the same as in Ng's book, and although more topics are covered than in Sze's 2nd Ed, the theory of what is covered is often less in-depth. This is a nice book to have, especially if you do not have a copy of Ng's book, but I would not get rid of your 2nd edition of Sze yet. I am giving it 3 stars not because it is a bad book, but I truly believe there is a great deal of similarity between this 3rd Ed of Sze and the 2nd Ed of Ng's book, and I feel a little disappointed.
ok, but the quality is not that good. the paper smells bad but the printing is fine. But anyway, this book is the most classical one for semiconductor devices.
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